RF GaN Market (Material Type - GaN-on-Si, GaN-on-SiC, and Others; Application - Military, Telecom Infrastructure, Satellite Communication, Wired Broadband, Commercial Radar and Avionics, and Others): Global Industry Analysis, Trends, Size, Share and Forecasts to 2032

A recent report published by Infinium Global Research on RF GaN market provides in-depth analysis of segments and sub-segments in the global as well as regional RF GaN market. The study also highlights the impact of drivers, restraints, and macro indicators on the global and regional RF GaN market over the short term as well as long term. The report is a comprehensive presentation of trends, forecast and dollar values of global RF GaN market.

Market Insight:

The global RF GaN market was valued at USD 1504.23 million in 2023 and is expected to reach USD 4099.96 million in 2032, with a CAGR of 12.49% during the forecast period 2024-2032.

RF GaN stands for Radio Frequency Gallium Nitride, and it refers to a compound semiconductor technology used for high-frequency, high-power electronic applications, particularly in RF (radio frequency) and microwave domains. The increasing adoption of GaN in radiofrequency applications, due to its capabilities for high frequency, high power, and high-temperature operations, is a key factor propelling market growth. The swift expansion of GaN in RF-power electronics, escalating demand for GaN RF semiconductor devices in military, aerospace, and defense sectors, greater use of RF GaN to support high frequencies in complex applications like radar, phased arrays, cable TV (CATV), base transceiver stations for 5G, defense communications, and VSAT, the increasing need for RF GaN solutions in the industrial and cellular infrastructure market, as well as the applications of GaN technology in electric and hybrid electric vehicles, are anticipated to enhance market growth throughout the forecast period. RF GaN provides several advantages, including elevated power density, enhanced reliability, smaller dimensions, and superior performance, all of which are driving market growth. Rising demand for IT and telecommunications equipment, along with the uptake of energy and power applications, are the primary market forces propelling market expansion. The increasing need for RF GaN devices stems from the continuous advancement of technologies in the GaN ecosystem, the suitability of GaN for RF uses, and the escalating adoption of GaN RF semiconductor devices in military, defense, and aerospace industries. The key companies involved in the RF GaN market include Aethercomm Inc., Analog Devices Inc., Wolfspeed Inc., Integra Technologies Inc., MACOM Technology Solutions Holdings Inc., Microsemi Corporation (Microchip Technology Incorporated), Mitsubishi Electric Corporation, NXP Semiconductors NV, Qorvo Inc., STMicroelectronics NV, among others. Despite the market's growth, manufacturers face technical challenges in producing and implementing GaN power electronics. Improvements in device processing and packaging are crucial, with issues like charge trapping and current collapse requiring creative solutions. The sector is actively addressing these challenges through innovative research and development.

The transition of the telecommunications sector to 5G networks has propelled the integration of 5G RF semiconductors, which are essential for network service providers because they enable connections with higher frequency data bandwidth. GaN devices tackle power and thermal management issues in RF systems, enabling optimal frequency generation at required bands while avoiding interference. The swift growth of 5G infrastructure is evident in the increasing count of mobile subscriptions and network rollouts globally. Additionally, the automotive industry is fueling advancements in RF GaN technology, especially in electric and autonomous vehicle applications. Silicon carbide components are utilized in onboard battery chargers for different types of vehicles. RF electronics play a vital role in sophisticated driver assistance systems and vehicle-to-everything communication platforms. The progress of autonomous systems has generated new prospects for RF GaN implementation, as high-performance RF components are becoming more essential. Integra enhanced its 100V RF GaN product range by adding seven new items aimed at avionics, directed energy, electronic warfare, and radar uses, showcasing the industry's drive for increased power density and efficiency. The RF GaN market's slower expansion is due to the high cost of GaN compared to competitors like GaAS and Si. The lower availability of GaN materials and higher production costs, such as the reaction of Ga2O3 and NH3 at 1000 degrees Celsius, reduce demand for RF GaN in small signal MMIC and LNA devices. This, combined with restricted applications and high production costs, hinders the growth of the RF GaN market. Furthermore, the market has future growth opportunities due to the miniaturization of RF GaN components. GaN technology enables the miniaturization of RF circuits, saving space and facilitating ultra-dense installations of base stations and small cells. GaN technology is enabling the reduction of size in consumer electronics, telecommunications facilities, and the automotive industry. This trend enables compact GaN RF components, making mobiles and laptops more compact while maintaining operational standards. GaN-based radar systems enable better driver-assistance systems and autonomous vehicle development. GaN devices in electric vehicles create lightweight vehicles, enhancing energy efficiency and driving distances. GaN technology will drive industry innovation, influencing consumer electronics, telecommunications, and automotive systems to meet market demands for smaller, high-performance devices. Companies are focusing on launching RF GaN chips, which can easily be incorporated into devices. For instance, Qorvo® has launched three integrated RF multi-chip modules for advanced radar applications in 2024, leveraging Qorvo's advanced packaging and process technology for compact size, superior performance, and reduced power consumption.

North America is anticipated to contribute the highest share of the RF GaN market. The United States leads the semiconductor industry because of its robust defense and aerospace sectors, the evolution of 5G infrastructure, and cutting-edge military technologies. Leading RF semiconductor companies and research organizations propel advancements in GaN-on-silicon technology. The robust government backing and defense contracts in the region propel technological progress and market expansion, particularly through the use of RF GaN in commercial sectors such as wireless infrastructure and satellite communications. Meanwhile, Europe is the region experiencing rapid growth in the RF GaN market. The European market for RF GaN components is growing because of funding in defense upgrades and the development of 5G infrastructure. European producers possess robust expertise in GaN technology, especially in radar systems and telecom devices. The area's emphasis on renewable energy and electric vehicles has heightened the demand for RF GaN components. Robust regulatory frameworks and standardization initiatives encourage advanced semiconductor technologies, whereas the area’s focus on diminishing reliance on external suppliers boosts domestic manufacturing investments.

Report Scope of the RF GaN Market:

Segment wise revenue contribution in the global RF GaN market

The report on global RF GaN market provides a detailed analysis of segments in the market based on Material Type, and Application.

Segmentation Based on Material Type

·       GaN-on-Si

·       GaN-on-SiC

·       Others

Segmentation Based on Application

·       Military

·       Telecom Infrastructure

·       Satellite Communication

·       Wired Broadband

·       Commercial Radar and Avionics

·       Others

Company Profiled:

·       Aethercomm Inc.

·       Analog Devices Inc.

·       Wolfspeed Inc.

·       Integra Technologies Inc.

·       MACOM Technology Solutions Holdings Inc.

·       Microsemi Corporation

·       Mitsubishi Electric Corporation

·       NXP Semiconductors NV

·       Qorvo Inc.

·       STMicroelectronics NV

Report Highlights:

The report provides deep insights into demand forecasts, market trends, and micro and macro indicators. In addition, this report provides insights into the factors that are driving and restraining the growth in this market. Moreover, The IGR-Growth Matrix analysis given in the report brings an insight into the investment areas that existing or new market players can consider. The report provides insights into the market using analytical tools such as Porter's five forces analysis and DRO analysis of the RF GaN market. Moreover, the study highlights current market trends and provides forecasts from 2024-2032. We also have highlighted future trends in the market that will affect the demand during the forecast period. Moreover, the competitive analysis given in each regional market brings an insight into the market share of the leading players.