Infinium Global Research has undertaken a new report on Global Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs) Market: Trends Analysis and Forecast 2023. The report presents analysis global as well as regional markets of global insulated gate bipolar transistors (IGBTs) and metal oxide field effect transistor (MOSFETs) over the period of 2015 to 2021 Moreover, the IGR-Growth Matrix given in the report provides key focus areas and investment areas the market players can focus on. The market size is presented in terms of value for the historic year 2015 and estimated for forecast period of 2017 to 2023.
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The market for IGBTs is relatively mature while the market for MOSFETs is likely to grow at a faster pace due its advance features. MOSFETs are new semiconductors and are anticipated to witness significant demand over the period of 2017 to 2023. In 2013 the IGBTs accounted for more than 75% of the market size of IGBTS and MOSFETs together. Key attributes such as high efficiency, faster switching and small form factor are expected to boost the demand for MOSFETs over the next few years. MOSFETs are relatively costlier than IGBTs however, IGBTs are already popular in the global market and hence hold larger market size than that of MOSFETs. Additionally, IGBTs find more demand in the industry due to their low prices and higher efficiency however it is preferred in the applications that do not require fast switching.
The report covers the analysis of global as well as regional markets of IGBTs and MOSFET semiconductors. Moreover, the report provides deep insights on demand forecasts, market trends and micro and macro indicators. In addition, this report provides insights on the factors that driving and restraining the demand globally as well as regionally. Moreover key investment market analysis given in the report brings an insight on the investment areas that existing or new market players can consider.
Report titled “Global Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs) Market- Insights, Market Size, Trends and Forecast by 2023, covers analysis of following geographies
· North America: Includes the U.S., Canada and Mexico markets
· Europe: includes Germany, the United Kingdom, France, Spain, Russia, and others
· Asia Pacific: Includes China, Japan, India, Australia and others
· Latin America: Includes Brazil, Argentina and others
· Rest of the World: Includes South Africa and Middles East and others.
Furthermore, the report profiles the leading market players in global insulated gate bipolar transistors (IGBTS) and metal oxide field effect transistor (MOSFETS) market including Fairchild Semiconductor International Inc., STMicroelectronics N.V., ABB Ltd., Hitachi Power Semiconductor Device Ltd., Toshiba Corporation, Mitsubishi Electric Corporation, and Infineon Technologies AG.
Reasons to buy this report
- Comprehensive analysis of global as well as regional markets of global insulated gate bipolar transistors (IGBTs) and metal oxide field effect transistor (MOSFETs)
- Complete coverage of all the product type and applications segments to analyze the trends, developments, and forecast of market size up to 2023.
- Comprehensive analysis of the companies operating in this market. The company profile includes analysis of product portfolio, revenue, SWOT analysis and latest developments of the company.
- Infinium Global Research- Growth Matrix presents analysis of the product segments and geographies that market players should focus to invest, consolidate, expand and/or diversify.
About Infinium Global Research
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